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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3918
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK)
FEATURES
* Low on-state resistance RDS(on)1 = 7.5 m MAX. (VGS = 10 V, ID = 24 A) * Low Ciss: Ciss = 1300 pF TYP. * 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
25 20 48 192 29 1.0 150 -55 to +150 22 48
V V A A W W C C A mJ
(TO-252)
Total Power Dissipation (TC = 25C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 12.5 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17077EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan
The mark
shows major revised points.
2004
2SK3918
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 12 A VGS = 10 V, ID = 24 A VGS = 5.0 V, ID = 12 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12.5 V, ID = 24 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 100
UNIT
A
nA V S
2.0 6
2.5 12 5.9 11 1300 310 220 13 14 38 14
3.0
Drain to Source On-state Resistance
7.5 22.2
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 20 V VGS = 10 V ID = 48 A IF = 48 A, VGS = 0 V IF = 48 A, VGS = 0 V di/dt = 100 A/s
28 5 10 0.98 27 15
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D17077EJ3V0DS
2SK3918
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
120
PT - Total Power Dissipation - W
35 30 25 20 15 10 5 0
0 25 50 75 100 125 150 175
100 80 60 40 20 0
TC - Case Temperature - C
0
25
50
75
100
125
150
175
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
ID - Drain Current - A
100
ID(DC)
PW = 100 s
10
RDS(on) Limited (at VGS = 10 V)
1 ms
1
Power Dissipation Limited 10 ms TC = 25C Single pulse
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 125C/W 100
10
Rth(ch-C) = 4.31C/W
1
0.1 Single pulse 0.01 100
1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000
Data Sheet D17077EJ3V0DS
3
2SK3918
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
200 VGS = 10 V
ID - Drain Current - A
1000 100 10 1 0.1 Pulsed 0.01 0 1 2 3 0 1 2 3 4 5 6
VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V
150
100
50
5.0 V
ID - Drain Current - A
Tch = -55C 25C 75C 125C 150C
VDS = 10 V Pulsed
0
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
4
VGS(off) - Gate Cut-off Voltage - V
100
VDS = 10 V ID = 1 mA 3
10
Tch = -55C 25C 75C 125C 150C
2
1 VDS = 10 V Pulsed 0.1 0.1 1 10 100
ID - Drain Current - A
1
0 -100
-50
0
50
100
150
200
Tch - Channel Temperature - C
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
20
Pulsed
15
Pulsed
15 VGS = 5.0 V 10 10 V 5
10 ID = 24 A 5
0 1 10 100 1000
ID - Drain Current - A
0 0 5 10 15 20
VGS - Gate to Source Voltage - V
4
Data Sheet D17077EJ3V0DS
2SK3918
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
15
Ciss, Coss, Crss - Capacitance - pF
10000
10 VGS = 10 V
Ciss 1000
5 ID = 24 A Pulsed 0 -100 -50 0 50 100 150 200
Coss VGS = 0 V f = 1 MHz 100 0.01 0.1 1 Crss 10 100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
30
25 20 15 10 5 0
100 tf 10
td(off) tr td(on)
VDD = 20 V 12.5 V 5V VGS
10 8 6 4
VDS
2 0
1 0.1 1 10 100
ID - Drain Current - A
0
10
20
30
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000
IF - Diode Forward Current - A
1000 VGS = 10 V
trr - Reverse Recovery Time - ns
100 10 1 0.1
di/dt = 100 A/s VGS = 0 V 100
0V
10
Pulsed 0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
1 1 10
IF - Diode Forward Current - A
100
Data Sheet D17077EJ3V0DS
5
VGS - Gate to Source Voltage - V
VDD =12.5 V VGS = 10 V RG = 10
ID = 48 A, 42 A (at VDD = 5 V)
12
2SK3918
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
100
IAS - Single Avalanche Current - A Energy Derating Factor - %
120 100 80 60 40 20 0
0.1 1 10
IAS = 22 A EAS = 48 mJ
VDD = 12.5 V RG = 25 VGS = 20 0 V IAS 22 A
10 VDD = 12.5 V RG = 25 VGS = 20 0 V Starting Tch= 25C 1 0.01
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D17077EJ3V0DS
2SK3918
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
Mold Area
0.7 TYP.
2) TO-252 (MP-3ZK)
2.3 0.1 0.5 0.1
6.6 0.2 5.3 TYP. 4.3 MIN.
4
4.0 MIN. 6.1 0.2
1.0 TYP.
6.50.2 5.1 TYP. 4.3 MIN. 4
2.30.1 0.50.1 No Plating
1
2
3
1.8 0.2
6.10.2 10.4 MAX. (9.8 TYP.)
16.1 TYP.
4.0 MIN.
9.3 TYP.
1.14 MAX.
No Plating
1
0.8
2
3
No Plating 0 to 0.25 0.50.1 1.0
1.14 MAX.
0.76 0.1 2.3 TYP. 2.3 TYP.
1.02 TYP.
0.760.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain)
0.5 0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
0.51 MIN.
Data Sheet D17077EJ3V0DS
7
2SK3918
* The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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